Certification: | CE |
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Application: | 3D Sensors |
Structure: | Diode |
Output Power: | 1W |
Wavelength: | 850nm |
Warranty: | One Year |
Samples: |
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Customization: |
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Features:
850nm single longitudinal mode
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
Applications:
3D sensors
Lidars
IR illuminations
Medical applications
Proximity sensors
Parameter | Typ. |
Center Wavelength | 850±10nm |
Output Power | 1W |
Threshold Current | 0.15A |
Forward Current | 1.3A |
Power Conversion Efficiency |
35% |
Slope Efficiency | 0.87W/A |
Emission Area | 354×355um |
Laser Forward Voltage | 2.2V |
Series Resistance | 0.71Ω |
Beam Angle | 18Degrees |
Wavelength Temp. Drift | 0.07nm/ºC |
Soldering Temperature | 260(10s)ºC |
Substrate | AIN |
Case Operating Temp | -40-85ºC |
Storage Temp | -40-105ºC |
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