High Power 10W 808nm C-Mount Semiconductor Laser Diode Single Emitter

Product Details
Customization: Available
Certification: ISO
Application: Emitter
Gold Member Since 2022

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Registered Capital
10000000 RMB
Plant Area
>2000 square meters
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Basic Info.

Model NO.
CM808DL10
Structure
SH
Production Capacity
1000PCS/Month

Product Description

10W 808nm C-Mount Single Emitter Diode Laser
Features:
CM808DL10 is a high-quality C-mount package laser diode, which Fabry-Perot laser based on state-of-the-art, quantum-well epitaxial layer growth and reliable ridge waveguide structure. CM808DL10 is easy to mount and provides good thermal contact, making it an ideal choice for high power and OEM applications.  C-mount package has two weled gold contacts to the n- and p- doped semiconductor layers.
CM808DL10 single emitter laser diode series, which based on Quantum-well epitaxy and ridge waveguide structure design. C-Mount packaged single emitters provide excellent reliability and performance. Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm. Package designs include TO mounts, CoS mounts, C-mounts and F-mounts. Provide beam shaping services like fast-axis compression according to customer demands.

High Power 10W 808nm C-Mount Semiconductor Laser Diode Single Emitter

Data sheet:

Item No.: CM808DL10

Optical  
Center Wavelength λ 808nm
Wavelength Tolerance ±5nm
Output Power 10W
Slope Efficiency 1.1W/A
Electrical  
Operating Current Iop 5A
Threshold Current Ith 0.3A
Operating Voltage Vop 2V
Power Conversion Efficiency 50%
Thermal  
Operating Temperature 15~35ºC
Storage Temperature -40~80ºC
Wavelength Temperature Coefficient 0.3nm/ºC
 

Detailed Drawing:
High Power 10W 808nm C-Mount Semiconductor Laser Diode Single Emitter
 

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