Customization: | Available |
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Certification: | CE |
Wavelength: | 976nm |
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Overview:
8W output power, 976nm central wavelength
CW working mode, 1 emitter on the chip, TE polarization mode
The conversion efficiency of our chip?can reach?60%
New epitaxial structure design and material epitaxy
Advantage:
Long lifetime>10000 hours
High Reliability and stability
Single Emitter Laser Chip
Application:
Fiber laser pumping source
Autonomous Driving Lidar
Direct Semiconductor Laser
Laser illumination
Optical | Min | Typ | Max |
Central Wavelength | 966nm | 976nm | 986nm |
Output Power | 8W | ||
Working Mode | CW | ||
Spectrum Width | 3nm | ||
Number of Emitter | 1 | ||
Emitter Width | 95um | ||
Emitter Pitch | 400um | ||
Filling Factor | 50% | ||
Cavity Length | 3990 | 4000um | 4010 |
Thickness | 110um | 130um | 150um |
Fast Axis Divergence(FWHM) | 36Deg | 40Deg | |
Slow Axis Divergence (FWHM) | 10Deg | 12Deg | |
Polarization Mode | TE | ||
Slope Efficiency | 0.95W/A | 1W/A | |
Electrical | |||
Operating Current Iop | 10A | 11A | |
Threshold Current Ith | 0.7A | 1A | |
Operating Voltage Vop | 1.75V | 2V | |
Conversion Efficiency | 54% | 58% | |
Thermal | |||
Operating Temperature | 15ºC | 25ºC | 35ºC |
Wavelength Temperature Coefficient | 0.28nm/ºC |