Customization: | Available |
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Certification: | CE |
Wavelength: | 1470nm |
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3W 1470nm Single Emitter Laser Chip is an InP-based Unmounted Diode Laser Chip that operates from 1450 to 1490 nm. It provides 3 W of power and has an efficiency of more than 23%. This TE polarized laser diode chip has a spectral width of less than 20 nm (FWHM). It consists of single emitter that have a width of 100 μm. 3W 1470nm Single Emitter Laser Chip requires a DC supply of 1.6 V and consumes less than 9 A of current. It is fabricated with Brandnew's InP epitaxy layer and is ideal for medical, aesthetics, illumination, and material processing applications.
Features:
Available in chip on submount design
P Down sealed package
High stability
AuSn bonding
RoHS compliance
Product Photo
Optical | |
Center Wavelengt | 1470nm |
Optical Power | 3W |
Working Mode | CW |
Spectrum Width | 10nm |
Emitter Width | 100um |
Cavity Length | 2000um |
Chip Width | 500um |
Thickness | 150um |
Fast Axis Divergence(FWHM) | 35Deg |
Slow Axis Divergence(FWHM) | 10Deg |
Slope Efficiency | 0.35W/A |
Electrical | |
Threshold Current Ith | 0.5A |
Operating Current Iop | 9A |
Operating Voltage Vop | 1.6V |
Conversion Efficiency | 23% |
Thermal | |
Operating Temperature | 25ºC |
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