5MW 850nm Vertical Cavity Surface Emitting Laser Die Unmounted Chip

Product Details
Customization: Available
Certification: CE
Application: 3D Sensors
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Registered Capital
10000000 RMB
Plant Area
>2000 square meters
  • 5MW 850nm Vertical Cavity Surface Emitting Laser Die Unmounted Chip
  • 5MW 850nm Vertical Cavity Surface Emitting Laser Die Unmounted Chip
  • 5MW 850nm Vertical Cavity Surface Emitting Laser Die Unmounted Chip
  • 5MW 850nm Vertical Cavity Surface Emitting Laser Die Unmounted Chip
  • 5MW 850nm Vertical Cavity Surface Emitting Laser Die Unmounted Chip
  • 5MW 850nm Vertical Cavity Surface Emitting Laser Die Unmounted Chip
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Basic Info.

Model NO.
VC850SE5
Structure
Diode
Power
5MW
Wavelength
850nm
Warranty
One Year
Origin
China

Product Description

5mw 850nm Vertical Cavity Surface Emitting Laser Die Unmounted Chip

Key Features

850nm single wavelength  

Low wavelength drift 

Oxide isolation technology 

Low threshold current 

Small emission area 

Easy to collimate

 

Applications

3D sensors 

Lidars 

IR illuminations 

Medical applications 

Proximity sensors 

Industrial application

 

5mw 850nm Vertical Cavity Surface Emitting Laser Die Unmounted Chip Packaging Suggestion 

For packaging, the user should use high thermal conductive substrate with AlN or copper; the user also attaches die onto the substrate using high thermal conductive materials such as nanosilver gel or AuSn. The user should have the equipments such as die attachment, wire bonder etc., which should be located in 1000 class clean room. For further assistance in need, please feel free to contact us! We would work with you to solve your issues.

5MW 850nm Vertical Cavity Surface Emitting Laser Die Unmounted Chip5MW 850nm Vertical Cavity Surface Emitting Laser Die Unmounted Chip

Specification
Item No.: VC850G10
Electrical Optical Characteristics Typ.
Threshold Current 1.3mA
Forward Voltage 2.0V
Differential Resistance 75Ohms
Slope Efficiency 1W/A
Output Power 6mW
Power Conversion Efficiency 41%
Wavelength 850nm
Divergence Angle 20Deg
Size  
Die Size 170umx170um
Die Thickness 130um
Number of Emitters 1
Bond Pad Size(Anode Pad) 90um
Back Electrode Size(Cathode Pad) 170umx170um
Dimension
5MW 850nm Vertical Cavity Surface Emitting Laser Die Unmounted Chip
 
About us

Hangzhou Brandnew Technology Co., Ltd.
Founded in 2011, BrandNew, the laser diode company, manufactures high-power diode lasers and systems in a wide range of output powers and wavelengths including fiber-coupled, stack bar lasers and plug and play lasers.

Cooperated with Institute of semiconductors Chinese academy of sciences and Zhejiang University, Today, over 60 technicians and 2 scientists, 20 technicians are with PHD degree. Production space is 10000 Class Lab Clean Room with 2000 square meters. Turnover per year is more than 10M US dollars.

BrandNew's strengths are in talent employees, quality engineering,Process control, product development and volume manufacturing.

Core Competency

Diode Packaging    Beam Shaping

Reliability Testing    Efficient Cooling 

5MW 850nm Vertical Cavity Surface Emitting Laser Die Unmounted Chip

FAQ
Can you provide technology supports?
Yes, we have a professional technology supporting team for your timely services. 

What about the delivery?
We can offer the door to door services by air, just depend on your actual request. Such as DHL, UPS, TNT, FEDEX


What is the lead time?
Normally 3-5 days. Customized products need 15 working days.

Do you have any MOQ limit?
Low MOQ, 1pc for sample checking is available
 
What is your terms of payment?
T/T or Western Union, for your choice.

Do you offer guarantee for the products?
Yes, all products have been tested before shipping out.
Lifelong technique support. One year warranty.  

5MW 850nm Vertical Cavity Surface Emitting Laser Die Unmounted Chip

 

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