Customization: | Available |
---|---|
Certification: | CE |
Wavelength: | 976nm |
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We produce our semiconductor materials under the strictest quality controls. We work only with state-of-the-art epitaxy, processing and facet coating technology. Our bars, semi-bars and single emitters for high-power diode lasers therefore meet the most exacting demands: They are extremely reliable, efficient and durable. Our semiconductor products are easily assembled using standard soldering methods.
Feature
5nm spectrum width, 100um emitter width
1W/A slope efficiency, 50% conversion efficiency
Optimized epitaxial structure design
Unique technology for highest reliability and lifetime
Application
Fiber Laser Pumping Source
Autonomous Driving Lidar
Free space optical communication
Laser lighting
Product Photo
Optical | Min | Typ | Max |
Central Wavelength | 966nm | 976nm | 986nm |
Output Power | 2W | ||
Working Mode | CW | ||
Spectrum Width | 5nm | ||
Emitter Width | 100um | ||
Number of Emitter | 1 | ||
Emitter Pitch | 100um | ||
Chip Width | 490um | 500um | 510um |
Cavity Length | 980um | 1000um | 1020um |
Thickness | 130um | 135um | 145um |
Fast Axis Divergence(FWHM) | 35deg | ||
Slow Axis Divergence (FWHM) | 10deg | ||
Polarization Mode | TE | ||
Slope Efficiency | 0.95W/A | 1W/A | |
Electrical | |||
Operating Current Iop | 2.5A | ||
Threshold Current Ith | 0.4A | ||
Operating Voltage Vop | 1.6V | ||
Conversion Efficiency | 50% | ||
Thermal | |||
Test Temperature | 25ºC | ||
Wavelength Temperature Coefficient | 0.35nm/ºC |
Delivery & Packing