4W 940nm VCSEL Diode Array Laser Chip
Key Features:
Designed for high volume 3D sensing applications (ToF, Structured Light, Active stereo, flood illuminators)
Longitudinal single mode, lateral multimode
Optical output power scalable (0.5-4W)
Doughnut shaped, symmetrical far field
Surface mountable
Non-hermetic operation
High reliability
Applications:
Scientific experiments
Instrumentation testing
Radio and television testing
VCSELs are limited in terms of output power because they can only produce high beam quality in a rather small mode area (a few micrometers in diameter). For larger mode areas, the excitation of higher-order transverse modes cannot be avoided; this is due to the extremely small resonator length of a few micrometers and the difficulty of uniformly pumping a large active area with ring electrodes. However, due to the short resonator, single-frequency operation is easy to achieve, even in combination with some wavelength tunability. In addition, VCSELs can be modulated at high frequencies, which can be used in applications such as fiber-optic communications.
Characteristics
| Parameter |
Typ. |
| Center Wavelength |
940±10nm |
| Output Power |
4W |
| Spectra width |
0.5ms |
| Slope Efficiency |
0.95W/A |
| Threshold current |
1200A |
| Wavelength Temp. Coefficient |
0.07nm/ºC |
| Operating Voltage |
2.3V |
| Emitter Quantity |
1273 |
| Electrical |
|
| Threshold Current Ith |
1.2A |
| Operating Current Lop |
7A |
| Operating Voltage Vop |
2.2V |
| Thermal |
|
| Test Temperature |
25ºC |
| Storage Temperature |
-40~+10ºC |
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