| Customization: | Available |
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| Certification: | CE |
| Application: | 3D Sensors |
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The basis of 50mW 850nm Single Mode TO Laser Diode with PD includes a combination of laser diodes (LD) and transistor outlines (TO), where the laser diode is a semiconductor laser that generates stimulated radiation by injecting current into the semiconductor PN junction to achieve population inversion distribution, and then uses the positive feedback of the resonant cavity to achieve light amplification and generate laser oscillation
Features:
Output power: 50mW
TO 5.6mm Package
Other package C-Mount or F-Mount available
Narrow beam divergence.
High laser power density.
Specification
| Optical | Typ. |
| Center Wavelength | 850nm |
| Wavelength Tolerance | ±10nm |
| Working Mode | QCW/CW |
| Output Power | 500mW |
| Pulse Width | 0.5ms |
| Divergence Angle | 22Degree |
| Duty Cycle | 1% |
| Emitter Size | 575x550um |
| Electrical | |
| Threshold Current Ith | 120mA |
| Operating Current Iop | 700mA |
| Operating Voltage Vop | 2.1V |
| Slope Efficiency | 1W/A |
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Thermal |
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| Test Temperature | 25ºC |
| Storage Temperature | -40-105ºC |
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