Customization: | Available |
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Certification: | CE |
Application: | Industry |
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high-power laser diode arrays specifically for long-life operation in quasi-CW applications. These arrays feature a new epitaxial wafer design that utilizes a large optical cavity and are packaged using AuSn solder and CTE-matched heat sinks.
It given to the 80x and 88x wavelength bands running at 100-300 Watts per bar. Reliable operating points are identified for various applications including range finding (product lifetimes less than 1 billion shots) and industrial machining (product lifetimes greater than 20 billion shots).
Optical | |
Center Wavelength | 808±10nm |
Output Power | 2000W |
Quantity of Bars | 10 |
Working Mode | QCW |
Fast Axis Divergence(FWHM) | 38Deg |
Slow Axis Divergence(FWHM) | 12Deg |
Frequency | 100Hz |
Pulse Width | <200us |
Electrical | |
Operating Current Iop | 200A |
Threshold Current Ith | 25A |
Operating Voltage Vop | 20V |
Thermal | |
Test Temperature | 25ºC |
Storage Temperature | 0-55ºC |